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2SK3127(TE24L,Q)

Toshiba Semiconductor and Storage

Product No:

2SK3127(TE24L,Q)

Package:

TO-220SM

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 30V 45A TO220SM

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 2300 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs 66 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 12mOhm @ 25A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 3V @ 1mA
Supplier Device Package TO-220SM
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 65W (Tc)
Series -
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 45A (Ta)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number 2SK3127

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