Home / Single FETs, MOSFETs / 2SK3700(F)

2SK3700(F)

Toshiba Semiconductor and Storage

Product No:

2SK3700(F)

Manufacturer:

Toshiba Semiconductor and Storage

Package:

TO-3P(N)

Batch:

Datasheet:

Description:

MOSFET N-CH 900V 5A TO3P

Quantity:

Delivery:

Payment:

In Stock : 93

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$2.28

$2.28
10

$2.04915

$20.4915
100

$1.647205

$164.7205
500

$1.35337

$676.685
1000

$1.12137

$1121.37
2000

$1.044031

$2088.062
5000

$1.005366

$5026.83

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for 2SK3700(F), please feel free to contact us. To facilitate the processing of your inquiry, kindly include 2SK3700(F) and the required quantity in your RFQ. IICSEMI provides the latest quote for 2SK3700(F) without requiring registration. Latest information on 2SK3700(F): #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs 2SK3700(F) latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	28 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	2.5Ohm @ 3A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1mA
Supplier Device Package	TO-3P(N)
Drain to Source Voltage (Vdss)	900 V
Power Dissipation (Max)	150W (Tc)
Series	-
Package / Case	TO-3P-3, SC-65-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	5A (Ta)
Mfr	Toshiba Semiconductor and Storage
Package	Bulk
Base Product Number	2SK3700