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2SK3798(STA4,Q,M)

Toshiba Semiconductor and Storage

Product No:

2SK3798(STA4,Q,M)

Manufacturer:

Toshiba Semiconductor and Storage

Package:

TO-220SIS

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Datasheet:

Description:

POWER MOSFET TRANSISTOR TO-220(S

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Parameter Info

User Guide

Operating Temperature	150°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	26 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	3.5Ohm @ 2A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1mA
Supplier Device Package	TO-220SIS
Drain to Source Voltage (Vdss)	900 V
Power Dissipation (Max)	40W (Tc)
Series	-
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	4A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube

Detail Info

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