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2SK3906(Q)

Toshiba Semiconductor and Storage

Product No:

2SK3906(Q)

Manufacturer:

Toshiba Semiconductor and Storage

Package:

TO-3P(N)

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Datasheet:

Description:

MOSFET N-CH 600V 20A TO3P

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Product Information

Parameter Info

User Guide

Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	60 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	330mOhm @ 10A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 1mA
Supplier Device Package	TO-3P(N)
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	150W (Tc)
Series	-
Package / Case	TO-3P-3, SC-65-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	20A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk
Base Product Number	2SK3906