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APT1002RBNG

Microsemi Corporation

Product No:

APT1002RBNG

Manufacturer:

Microsemi Corporation

Package:

TO-247AD

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Datasheet:

Description:

MOSFET N-CH 1000V 8A TO247AD

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	105 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	1.6Ohm @ 4A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 1mA
Supplier Device Package	TO-247AD
Drain to Source Voltage (Vdss)	1000 V
Power Dissipation (Max)	240W (Tc)
Series	POWER MOS IV®
Package / Case	TO-247-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	8A (Tc)
Mfr	Microsemi Corporation
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube