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APT10M09B2VFRG

Microsemi Corporation

Product No:

APT10M09B2VFRG

Manufacturer:

Microsemi Corporation

Package:

T-MAX™ [B2]

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Datasheet:

Description:

MOSFET N-CH 100V 100A T-MAX

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	9875 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	350 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	9mOhm @ 50A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 2.5mA
Supplier Device Package	T-MAX™ [B2]
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	625W (Tc)
Series	POWER MOS V®
Package / Case	TO-247-3 Variant
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Mfr	Microsemi Corporation
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube