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APT10M11B2VFRG

Microsemi Corporation

Product No:

APT10M11B2VFRG

Manufacturer:

Microsemi Corporation

Package:

T-MAX™

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 100V 100A T-MAX

Quantity:

Delivery:

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In Stock : Please Inquiry

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 10300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 450 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 11mOhm @ 500mA, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 4V @ 2.5mA
Supplier Device Package T-MAX™
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 520W (Tc)
Series POWER MOS V®
Package / Case TO-247-3 Variant
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Mfr Microsemi Corporation
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube

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