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APT80SM120B

Microsemi Corporation

Product No:

APT80SM120B

Manufacturer:

Microsemi Corporation

Package:

TO-247

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Datasheet:

Description:

SICFET N-CH 1200V 80A TO247

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	235 nC @ 20 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	55mOhm @ 40A, 20V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.5V @ 1mA
Supplier Device Package	TO-247
Drain to Source Voltage (Vdss)	1200 V
Power Dissipation (Max)	555W (Tc)
Series	-
Package / Case	TO-247-3
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Mfr	Microsemi Corporation
Vgs (Max)	+25V, -10V
Drive Voltage (Max Rds On, Min Rds On)	20V
Package	Bulk