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APTC60DAM35T1G

Microsemi Corporation

Product No:

APTC60DAM35T1G

Manufacturer:

Microsemi Corporation

Package:

SP1

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Datasheet:

Description:

MOSFET N-CH 600V 72A SP1

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Product Information

Parameter Info

User Guide

Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	14000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	518 nC @ 10 V
Mounting Type	Chassis Mount
Rds On (Max) @ Id, Vgs	35mOhm @ 72A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	3.9V @ 5.4mA
Supplier Device Package	SP1
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	416W (Tc)
Series	-
Package / Case	SP1
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	72A (Tc)
Mfr	Microsemi Corporation
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk