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APTC90DAM60T1G

Microsemi Corporation

Product No:

APTC90DAM60T1G

Manufacturer:

Microsemi Corporation

Package:

SP1

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Datasheet:

Description:

MOSFET N-CH 900V 59A SP1

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Product Information

Parameter Info

User Guide

Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	13600 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs	540 nC @ 10 V
Mounting Type	Chassis Mount
Rds On (Max) @ Id, Vgs	60mOhm @ 52A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	3.5V @ 6mA
Supplier Device Package	SP1
Drain to Source Voltage (Vdss)	900 V
Power Dissipation (Max)	462W (Tc)
Series	CoolMOS™
Package / Case	SP1
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	59A (Tc)
Mfr	Microsemi Corporation
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tray