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APTM100DA33T1G

Microsemi Corporation

Product No:

APTM100DA33T1G

Manufacturer:

Microsemi Corporation

Package:

SP1

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Datasheet:

Description:

MOSFET N-CH 1000V 23A SP1

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Product Information

Parameter Info

User Guide

Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	7868 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	305 nC @ 10 V
Mounting Type	Chassis Mount
Rds On (Max) @ Id, Vgs	396mOhm @ 18A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	5V @ 2.5mA
Supplier Device Package	SP1
Drain to Source Voltage (Vdss)	1000 V
Power Dissipation (Max)	390W (Tc)
Series	-
Package / Case	SP1
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	23A (Tc)
Mfr	Microsemi Corporation
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk