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APTM20UM09SG

Microsemi Corporation

Product No:

APTM20UM09SG

Manufacturer:

Microsemi Corporation

Package:

Module

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Description:

MOSFET N-CH 200V 195A MODULE

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Parameter Info

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Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	12300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	217 nC @ 10 V
Mounting Type	Chassis Mount
Rds On (Max) @ Id, Vgs	9mOhm @ 74.5A, 10V
Product Status	Discontinued at Digi-Key
Vgs(th) (Max) @ Id	5V @ 4mA
Supplier Device Package	Module
Drain to Source Voltage (Vdss)	200 V
Power Dissipation (Max)	780W (Tc)
Series	-
Package / Case	J3 Module
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	195A (Tc)
Mfr	Microsemi Corporation
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk