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EPC2010

EPC

Product No:

EPC2010

Manufacturer:

EPC

Package:

Die

Batch:

-

Datasheet:

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Description:

GANFET N-CH 200V 12A DIE

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -40°C ~ 125°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 540 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs 7.5 nC @ 5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 25mOhm @ 6A, 5V
Product Status Discontinued at Digi-Key
Vgs(th) (Max) @ Id 2.5V @ 3mA
Supplier Device Package Die
Drain to Source Voltage (Vdss) 200 V
Power Dissipation (Max) -
Series eGaN®
Package / Case Die
Technology GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C 12A (Ta)
Mfr EPC
Vgs (Max) +6V, -4V
Drive Voltage (Max Rds On, Min Rds On) 5V
Package Tape & Reel (TR)
Base Product Number EPC20

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