Home / FET, MOSFET Arrays / FF8MR12W2M1B11BOMA1

FF8MR12W2M1B11BOMA1

Infineon Technologies

Product No:

FF8MR12W2M1B11BOMA1

Manufacturer:

Infineon Technologies

Package:

AG-EASY2BM-2

Batch:

Datasheet:

Description:

MOSFET 2N-CH 1200V AG-EASY2BM-2

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for FF8MR12W2M1B11BOMA1, please feel free to contact us. To facilitate the processing of your inquiry, kindly include FF8MR12W2M1B11BOMA1 and the required quantity in your RFQ. IICSEMI provides the latest quote for FF8MR12W2M1B11BOMA1 without requiring registration. Latest information on FF8MR12W2M1B11BOMA1: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs FF8MR12W2M1B11BOMA1 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
Configuration	2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	11000pF @ 800V
Gate Charge (Qg) (Max) @ Vgs	372nC @ 15V
Mounting Type	Chassis Mount
Rds On (Max) @ Id, Vgs	7.5mOhm @ 150A, 15V (Typ)
Product Status	Obsolete
Vgs(th) (Max) @ Id	5.55V @ 60mA
Supplier Device Package	AG-EASY2BM-2
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Series	CoolSiC™+
Package / Case	Module
Technology	Silicon Carbide (SiC)
Power - Max	-
Current - Continuous Drain (Id) @ 25°C	150A (Tj)
Mfr	Infineon Technologies
Package	Tray
Base Product Number	FF8MR12