Home / FET, MOSFET Arrays / IPG20N06S2L65AAUMA1

IPG20N06S2L65AAUMA1

Infineon Technologies

Product No:

IPG20N06S2L65AAUMA1

Manufacturer:

Infineon Technologies

Package:

PG-TDSON-8-10

Batch:

Datasheet:

Description:

MOSFET

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for IPG20N06S2L65AAUMA1, please feel free to contact us. To facilitate the processing of your inquiry, kindly include IPG20N06S2L65AAUMA1 and the required quantity in your RFQ. IICSEMI provides the latest quote for IPG20N06S2L65AAUMA1 without requiring registration. Latest information on IPG20N06S2L65AAUMA1: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs IPG20N06S2L65AAUMA1 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	Logic Level Gate
Configuration	2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	410pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Mounting Type	Surface Mount, Wettable Flank
Rds On (Max) @ Id, Vgs	65mOhm @ 15A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2V @ 14µA
Supplier Device Package	PG-TDSON-8-10
Drain to Source Voltage (Vdss)	55V
Series	OptiMOS®
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Power - Max	43W (Tc)
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Mfr	Infineon Technologies
Package	Bulk
Base Product Number	IPG20N