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IRF8915

Infineon Technologies

Product No:

IRF8915

Manufacturer:

Infineon Technologies

Package:

8-SO

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Description:

MOSFET 2N-CH 20V 8.9A 8-SOIC

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Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Logic Level Gate
Configuration	2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	540pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	7.4nC @ 4.5V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	18.3mOhm @ 8.9A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	8-SO
Drain to Source Voltage (Vdss)	20V
Series	HEXFET®
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Power - Max	2W
Current - Continuous Drain (Id) @ 25°C	8.9A
Mfr	Infineon Technologies
Package	Tube
Base Product Number	IRF89