Home / Single, Pre-Biased Bipolar Transistors / RN2103MFV,L3XHF(CT

RN2103MFV,L3XHF(CT

Toshiba Semiconductor and Storage

Product No:

RN2103MFV,L3XHF(CT

Manufacturer:

Toshiba Semiconductor and Storage

Package:

VESM

Batch:

Datasheet:

Description:

AUTO AEC-Q PNP Q1BSR=22K, Q1BER=

Quantity:

Delivery:

Payment:

In Stock : 8000

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.3135

$0.3135
10

$0.2166

$2.166
100

$0.105545

$10.5545
500

$0.088027

$44.0135
1000

$0.06117

$61.17
2000

$0.05301

$106.02

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Product Information

Parameter Info

User Guide

Frequency - Transition	250 MHz
Current - Collector (Ic) (Max)	100 mA
Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 5mA
Resistor - Base (R1)	22 kOhms
Mounting Type	Surface Mount
Product Status	Active
Voltage - Collector Emitter Breakdown (Max)	50 V
Supplier Device Package	VESM
Series	Automotive, AEC-Q101
Transistor Type	PNP - Pre-Biased
Package / Case	SOT-723
Power - Max	150 mW
Resistor - Emitter Base (R2)	22 kOhms
Mfr	Toshiba Semiconductor and Storage
Current - Collector Cutoff (Max)	500nA
Package	Tape & Reel (TR)
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 10mA, 5V
Base Product Number	RN2103

Detail Info

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