Home / Single, Pre-Biased Bipolar Transistors / RN2116MFV,L3F

RN2116MFV,L3F

Toshiba Semiconductor and Storage

Product No:

RN2116MFV,L3F

Manufacturer:

Toshiba Semiconductor and Storage

Package:

VESM

Batch:

Datasheet:

Description:

TRANS PREBIAS PNP 50V 0.1A VESM

Quantity:

Delivery:

Payment:

In Stock : 15990

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.1615

$0.1615
10

$0.1178

$1.178
100

$0.063365

$6.3365
500

$0.049742

$24.871
1000

$0.034542

$34.542
2000

$0.028614

$57.228

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Product Information

Parameter Info

User Guide

Current - Collector (Ic) (Max)	100 mA
Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 5mA
Resistor - Base (R1)	4.7 kOhms
Mounting Type	Surface Mount
Product Status	Active
Voltage - Collector Emitter Breakdown (Max)	50 V
Supplier Device Package	VESM
Series	-
Transistor Type	PNP - Pre-Biased
Package / Case	SOT-723
Power - Max	150 mW
Resistor - Emitter Base (R2)	10 kOhms
Mfr	Toshiba Semiconductor and Storage
Current - Collector Cutoff (Max)	500nA
Package	Tape & Reel (TR)
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 10mA, 5V
Base Product Number	RN2116

Detail Info

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