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SSM3J143TU,LXHF

Toshiba Semiconductor and Storage

Product No:

SSM3J143TU,LXHF

Package:

UFM

Batch:

-

Datasheet:

-

Description:

SMOS P-CH VDSS:-20V VGSS:-8/+6V

Quantity:

Delivery:

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Payment:

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In Stock : 6032

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.418

    $0.418

  • 10

    $0.3591

    $3.591

  • 100

    $0.24947

    $24.947

  • 500

    $0.194788

    $97.394

  • 1000

    $0.158318

    $158.318

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C
FET Feature -
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 840 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs 12.8 nC @ 4.5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 29.8mOhm @ 3A, 4.5V
Product Status Active
Vgs(th) (Max) @ Id 1V @ 1mA
Supplier Device Package UFM
Drain to Source Voltage (Vdss) 20 V
Power Dissipation (Max) 500mW (Ta)
Series Automotive, AEC-Q101, U-MOSVI
Package / Case 3-SMD, Flat Leads
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 5.5A (Ta)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) +6V, -8V
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Package Tape & Reel (TR)

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