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SSM3J168F,LXHF

Toshiba Semiconductor and Storage

Product No:

SSM3J168F,LXHF

Manufacturer:

Toshiba Semiconductor and Storage

Package:

S-Mini

Batch:

Datasheet:

Description:

SMOS LOW RON VDS:-60V VGSS:+10/-

Quantity:

Delivery:

Payment:

In Stock : 4013

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.4465

$0.4465
10

$0.3458

$3.458
100

$0.20729

$20.729
500

$0.1919

$95.95
1000

$0.130492

$130.492

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Product Information

Parameter Info

User Guide

Operating Temperature	150°C
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	82 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	3 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	1.55Ohm @ 200mA, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2V @ 1mA
Supplier Device Package	S-Mini
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	600mW (Ta)
Series	Automotive, AEC-Q101, U-MOSVI
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	400mA (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	+10V, -20V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Package	Tape & Reel (TR)