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SSM3J321T(TE85L,F)

Toshiba Semiconductor and Storage

Product No:

SSM3J321T(TE85L,F)

Manufacturer:

Toshiba Semiconductor and Storage

Package:

TSM

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Datasheet:

Description:

MOSFET P-CH 20V 5.2A TSM

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Product Information

Parameter Info

User Guide

Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	640 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	8.1 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	46mOhm @ 3A, 4.5V
Product Status	Obsolete
Vgs(th) (Max) @ Id	1V @ 1mA
Supplier Device Package	TSM
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	700mW (Ta)
Series	U-MOSV
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	5.2A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	SSM3J321