SSM3J352F,LF

Toshiba Semiconductor and Storage

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SSM3J352F,LF

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S-Mini

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MOSFET P-CH 20V 2A S-MINI

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Operating Temperature	150°C
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	210 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	5.1 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	110mOhm @ 2A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	1.2V @ 1mA
Supplier Device Package	S-Mini
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	1.2W (Ta)
Series	U-MOSVI
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	2A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 10V
Package	Tape & Reel (TR)
Base Product Number	SSM3J352