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SSM3J66MFV,L3F

Toshiba Semiconductor and Storage

Product No:

SSM3J66MFV,L3F

Package:

VESM

Batch:

-

Datasheet:

-

Description:

MOSFET P-CH 20V 800MA VESM

Quantity:

Delivery:

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Payment:

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In Stock : 6500

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.3515

    $0.3515

  • 10

    $0.2451

    $2.451

  • 100

    $0.123975

    $12.3975

  • 500

    $0.101137

    $50.5685

  • 1000

    $0.075031

    $75.031

  • 2000

    $0.063128

    $126.256

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C
FET Feature -
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 100 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs 1.6 nC @ 4.5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 390mOhm @ 800mA, 4.5V
Product Status Active
Vgs(th) (Max) @ Id 1V @ 1mA
Supplier Device Package VESM
Drain to Source Voltage (Vdss) 20 V
Power Dissipation (Max) 150mW (Ta)
Series U-MOSVI
Package / Case SOT-723
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 800mA (Ta)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) +6V, -8V
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Package Tape & Reel (TR)
Base Product Number SSM3J66

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