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SSM5H16TU,LF

Toshiba Semiconductor and Storage

Product No:

SSM5H16TU,LF

Package:

UFV

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 30V 1.9A UFV

Quantity:

Delivery:

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Payment:

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In Stock : 3515

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.437

    $0.437

  • 10

    $0.34105

    $3.4105

  • 100

    $0.20463

    $20.463

  • 500

    $0.189506

    $94.753

  • 1000

    $0.128858

    $128.858

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C
FET Feature Schottky Diode (Isolated)
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 123 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 1.9 nC @ 4 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 133mOhm @ 1A, 4V
Product Status Active
Vgs(th) (Max) @ Id 1V @ 1mA
Supplier Device Package UFV
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 500mW (Ta)
Series U-MOSIII
Package / Case 6-SMD (5 Leads), Flat Lead
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 1.9A (Ta)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±12V
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4V
Package Tape & Reel (TR)
Base Product Number SSM5H16

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