SSM6G18NU,LF

Toshiba Semiconductor and Storage

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SSM6G18NU,LF

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Package:

6-µDFN (2x2)

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Description:

MOSFET P-CH 20V 2A 6UDFN

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Operating Temperature	150°C (TJ)
FET Feature	Schottky Diode (Isolated)
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	270 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	4.6 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	112mOhm @ 1A, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	1V @ 1mA
Supplier Device Package	6-µDFN (2x2)
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	1W (Ta)
Series	-
Package / Case	6-WDFN Exposed Pad
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	2A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	SSM6G18