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SSM6H19NU,LF

Toshiba Semiconductor and Storage

Product No:

SSM6H19NU,LF

Manufacturer:

Toshiba Semiconductor and Storage

Package:

6-UDFN (2x2)

Batch:

Datasheet:

Description:

MOSFET N-CH 40V 2A 6UDFN

Quantity:

Delivery:

Payment:

In Stock : 72918

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.342

$0.342
10

$0.2755

$2.755
100

$0.18734

$18.734
500

$0.140467

$70.2335
1000

$0.105355

$105.355

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Product Information

Parameter Info

User Guide

Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	130 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	2.2 nC @ 4.2 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	185mOhm @ 1A, 8V
Product Status	Active
Vgs(th) (Max) @ Id	1.2V @ 1mA
Supplier Device Package	6-UDFN (2x2)
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	1W (Ta)
Series	U-MOSVII-H
Package / Case	6-UDFN Exposed Pad
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	2A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 8V
Package	Tape & Reel (TR)
Base Product Number	SSM6H19