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SSM6J215FE(TE85L,F

Toshiba Semiconductor and Storage

Product No:

SSM6J215FE(TE85L,F

Manufacturer:

Toshiba Semiconductor and Storage

Package:

ES6

Batch:

Datasheet:

Description:

MOSFET P CH 20V 3.4A ES6

Quantity:

Delivery:

Payment:

In Stock : 87

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.418

$0.418
10

$0.36005

$3.6005
100

$0.26866

$26.866
500

$0.21109

$105.545
1000

$0.163115

$163.115
2000

$0.148722

$297.444

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Product Information

Parameter Info

User Guide

Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	630 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	10.4 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	59mOhm @ 3A, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	1V @ 1mA
Supplier Device Package	ES6
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	500mW (Ta)
Series	U-MOSVI
Package / Case	SOT-563, SOT-666
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	3.4A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	SSM6J215