SSM6J808R,LF

Toshiba Semiconductor and Storage

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SSM6J808R,LF

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Package:

6-TSOP-F

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Description:

P-CH MOSFET, -40 V, -7 A, 0.035O

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Operating Temperature	150°C
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	1020 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	24.2 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	35mOhm @ 2.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2V @ 100µA
Supplier Device Package	6-TSOP-F
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	1.5W (Ta)
Series	Automotive, AEC-Q101
Package / Case	6-SMD, Flat Leads
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	7A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	+10V, -20V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Package	Tape & Reel (TR)
Base Product Number	SSM6J808