SSM6K361NU,LF

Toshiba Semiconductor and Storage

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SSM6K361NU,LF

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6-UDFNB (2x2)

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Description:

MOSFET N-CH 100V 3.5A 6UDFNB

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Operating Temperature	150°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	430 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	3.2 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	69mOhm @ 2A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 100µA
Supplier Device Package	6-UDFNB (2x2)
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	1.25W (Ta)
Series	U-MOSVIII-H
Package / Case	6-WDFN Exposed Pad
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	3.5A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SSM6K361