Home / Single FETs, MOSFETs / SSM6K411TU(TE85L,F

SSM6K411TU(TE85L,F

Toshiba Semiconductor and Storage

Product No:

SSM6K411TU(TE85L,F

Manufacturer:

Toshiba Semiconductor and Storage

Package:

UF6

Batch:

Datasheet:

Description:

MOSFET N-CH 20V 10A UF6

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for SSM6K411TU(TE85L,F, please feel free to contact us. To facilitate the processing of your inquiry, kindly include SSM6K411TU(TE85L,F and the required quantity in your RFQ. IICSEMI provides the latest quote for SSM6K411TU(TE85L,F without requiring registration. Latest information on SSM6K411TU(TE85L,F: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs SSM6K411TU(TE85L,F latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	710 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	9.4 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	12mOhm @ 7A, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	1.2V @ 1mA
Supplier Device Package	UF6
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	1W (Ta)
Series	U-MOSIV
Package / Case	6-SMD, Flat Leads
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	10A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	SSM6K411