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SSM6N7002KFU,LXH

Toshiba Semiconductor and Storage

Product No:

SSM6N7002KFU,LXH

Package:

US6

Batch:

-

Datasheet:

-

Description:

SMOS 2 IN 1 DUAL NCH HIGH ESD PR

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 8638

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.3515

    $0.3515

  • 10

    $0.24795

    $2.4795

  • 100

    $0.12521

    $12.521

  • 500

    $0.11096

    $55.48

  • 1000

    $0.086355

    $86.355

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C
FET Feature -
Configuration 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds 40pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 0.6nC @ 4.5V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 1.5Ohm @ 100mA, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.1V @ 250µA
Supplier Device Package US6
Drain to Source Voltage (Vdss) 60V
Series Automotive, AEC-Q101, U-MOSVII-H
Package / Case 6-TSSOP, SC-88, SOT-363
Technology MOSFET (Metal Oxide)
Power - Max 285mW (Ta)
Current - Continuous Drain (Id) @ 25°C 300mA (Ta)
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel (TR)
Base Product Number SSM6N7002

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