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TK090E65Z,S1X

Toshiba Semiconductor and Storage

Product No:

TK090E65Z,S1X

Manufacturer:

Toshiba Semiconductor and Storage

Package:

TO-220

Batch:

Datasheet:

Description:

650V DTMOS VI TO-220 90MOHM

Quantity:

Delivery:

Payment:

In Stock : 71

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$4.674

$4.674
10

$3.92825

$39.2825
100

$3.177845

$317.7845
500

$2.824768

$1412.384
1000

$2.41871

$2418.71
2000

$2.277473

$4554.946

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Product Information

Parameter Info

User Guide

Operating Temperature	150°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2780 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs	47 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	90mOhm @ 15A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1.27mA
Supplier Device Package	TO-220
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	230W (Tc)
Series	-
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	30A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube