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TK090Z65Z,S1F

Toshiba Semiconductor and Storage

Product No:

TK090Z65Z,S1F

Package:

TO-247-4L(T)

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 650V 30A TO247-4L

Quantity:

Delivery:

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Payment:

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In Stock : 25

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $5.776

    $5.776

  • 10

    $4.95235

    $49.5235

  • 100

    $4.1268

    $412.68

  • 500

    $3.641312

    $1820.656

  • 1000

    $3.277177

    $3277.177

  • 2000

    $3.070837

    $6141.674

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 2780 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs 47 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 90mOhm @ 15A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 1.27mA
Supplier Device Package TO-247-4L(T)
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 230W (Tc)
Series DTMOSVI
Package / Case TO-247-4
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 30A (Ta)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube

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