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TK099V65Z,LQ

Toshiba Semiconductor and Storage

Product No:

TK099V65Z,LQ

Package:

5-DFN (8x8)

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 650V 30A 5DFN

Quantity:

Delivery:

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Payment:

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In Stock : 9954

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $5.035

    $5.035

  • 10

    $4.2275

    $42.275

  • 100

    $3.41962

    $341.962

  • 500

    $3.039696

    $1519.848

  • 1000

    $2.602744

    $2602.744

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 2780 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs 47 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 99mOhm @ 15A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 1.27mA
Supplier Device Package 5-DFN (8x8)
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 230W (Tc)
Series DTMOSVI
Package / Case 4-VSFN Exposed Pad
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 30A (Ta)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number TK099V65

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