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TK100L60W,VQ

Toshiba Semiconductor and Storage

Product No:

TK100L60W,VQ

Manufacturer:

Toshiba Semiconductor and Storage

Package:

TO-3P(L)

Batch:

Datasheet:

Description:

MOSFET N-CH 600V 100A TO3P

Quantity:

Delivery:

Payment:

In Stock : 474

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$31.7775

$31.7775
10

$29.3075

$293.075
100

$25.0268

$2502.68

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Product Information

Parameter Info

User Guide

Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	15000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	360 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	18mOhm @ 50A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.7V @ 5mA
Supplier Device Package	TO-3P(L)
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	797W (Tc)
Series	DTMOSIV
Package / Case	TO-3PL
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	100A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TK100L60