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TK10J80E,S1E

Toshiba Semiconductor and Storage

Product No:

TK10J80E,S1E

Manufacturer:

Toshiba Semiconductor and Storage

Package:

TO-3P(N)

Batch:

Datasheet:

Description:

MOSFET N-CH 800V 10A TO3P

Quantity:

Delivery:

Payment:

In Stock : 15

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$2.812

$2.812
10

$2.5232

$25.232
100

$2.067485

$206.7485
500

$1.760008

$880.004
1000

$1.484346

$1484.346
2000

$1.410132

$2820.264
5000

$1.357113

$6785.565

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Product Information

Parameter Info

User Guide

Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	46 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	1Ohm @ 5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1mA
Supplier Device Package	TO-3P(N)
Drain to Source Voltage (Vdss)	800 V
Power Dissipation (Max)	250W (Tc)
Series	π-MOSVIII
Package / Case	TO-3P-3, SC-65-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	10A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TK10J80