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TK10Q60W,S1VQ

Toshiba Semiconductor and Storage

Product No:

TK10Q60W,S1VQ

Manufacturer:

Toshiba Semiconductor and Storage

Package:

I-Pak

Batch:

Datasheet:

Description:

MOSFET N-CH 600V 9.7A IPAK

Quantity:

Delivery:

Payment:

In Stock : 75

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$2.774

$2.774
10

$2.49185

$24.9185
100

$2.002885

$200.2885
500

$1.645552

$822.776
1000

$1.36345

$1363.45
2000

$1.269418

$2538.836
5000

$1.222403

$6112.015

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Product Information

Parameter Info

User Guide

Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	700 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	430mOhm @ 4.9A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.7V @ 500µA
Supplier Device Package	I-Pak
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	80W (Tc)
Series	DTMOSIV
Package / Case	TO-251-3 Stub Leads, IPak
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	9.7A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TK10Q60