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TK12A50W,S5X

Toshiba Semiconductor and Storage

Product No:

TK12A50W,S5X

Package:

TO-220SIS

Batch:

-

Datasheet:

-

Description:

PB-F POWER MOSFET TRANSISTOR TO-

Quantity:

Delivery:

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Payment:

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In Stock : 50

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.9285

    $1.9285

  • 10

    $1.6036

    $16.036

  • 100

    $1.27604

    $127.604

  • 500

    $1.079732

    $539.866

  • 1000

    $0.916132

    $916.132

  • 2000

    $0.870324

    $1740.648

  • 5000

    $0.837606

    $4188.03

  • 10000

    $0.809875

    $8098.75

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 890 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 300mOhm @ 5.8A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.7V @ 600µA
Supplier Device Package TO-220SIS
Drain to Source Voltage (Vdss) 500 V
Power Dissipation (Max) 35W (Tc)
Series DTMOSIV
Package / Case TO-220-3 Full Pack
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 11.5A (Ta)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube

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