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TK12A60W,S4VX

Toshiba Semiconductor and Storage

Product No:

TK12A60W,S4VX

Manufacturer:

Toshiba Semiconductor and Storage

Package:

TO-220SIS

Batch:

Datasheet:

Description:

MOSFET N-CH 600V 11.5A TO220SIS

Quantity:

Delivery:

Payment:

In Stock : 30

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$3.6385

$3.6385
10

$3.26515

$32.6515
100

$2.67558

$267.558
500

$2.277663

$1138.8315
1000

$1.920919

$1920.919
2000

$1.824874

$3649.748
5000

$1.756265

$8781.325

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Product Information

Parameter Info

User Guide

Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	890 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	300mOhm @ 5.8A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.7V @ 600µA
Supplier Device Package	TO-220SIS
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	35W (Tc)
Series	DTMOSIV
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	11.5A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TK12A60