Home / Single FETs, MOSFETs / TK155U65Z,RQ

TK155U65Z,RQ

Toshiba Semiconductor and Storage

Product No:

TK155U65Z,RQ

Manufacturer:

Toshiba Semiconductor and Storage

Package:

TOLL

Batch:

Datasheet:

Description:

DTMOS VI TOLL PD=150W F=1MHZ

Quantity:

Delivery:

Payment:

In Stock : 3970

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$3.1065

$3.1065
10

$2.6068

$26.068
100

$2.10881

$210.881
500

$1.874483

$937.2415
1000

$1.605025

$1605.025

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for TK155U65Z,RQ, please feel free to contact us. To facilitate the processing of your inquiry, kindly include TK155U65Z,RQ and the required quantity in your RFQ. IICSEMI provides the latest quote for TK155U65Z,RQ without requiring registration. Latest information on TK155U65Z,RQ: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs TK155U65Z,RQ latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	150°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1635 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs	29 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	155mOhm @ 9A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 730µA
Supplier Device Package	TOLL
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	150W (Tc)
Series	DTMOSVI
Package / Case	8-PowerSFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	18A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)