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TK160F10N1,LXGQ

Toshiba Semiconductor and Storage

Product No:

TK160F10N1,LXGQ

Package:

TO-220SM(W)

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 100V 160A TO220SM

Quantity:

Delivery:

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Payment:

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In Stock : 4500

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $3.496

    $3.496

  • 10

    $2.9355

    $29.355

  • 100

    $2.37481

    $237.481

  • 500

    $2.1109

    $1055.45

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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Product Information

Parameter Info

User Guide

Operating Temperature 175°C
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 8510 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs 121 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 2.4mOhm @ 80A, 10V
Product Status Not For New Designs
Vgs(th) (Max) @ Id 4V @ 1mA
Supplier Device Package TO-220SM(W)
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 375W (Tc)
Series U-MOSVIII-H
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 160A (Ta)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number TK160F10

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