Home / Single FETs, MOSFETs / TK16J60W,S1VE

TK16J60W,S1VE

Toshiba Semiconductor and Storage

Product No:

TK16J60W,S1VE

Manufacturer:

Toshiba Semiconductor and Storage

Package:

TO-3P(N)

Batch:

Datasheet:

Description:

X35 PB-F POWER MOSFET TRANSISTOR

Quantity:

Delivery:

Payment:

In Stock : 49

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$4.617

$4.617
10

$3.87505

$38.7505
100

$3.134715

$313.4715
500

$2.786388

$1393.194
1000

$2.385849

$2385.849
2000

$2.246532

$4493.064

Not the price you want? Send RFQ Now and we'll contact you ASAP.

GOOD,as a globally renowned distributor of electronic components, sells a wide range of electronic components from the world's top brand manufacturers, ensuring that all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications, configurations, prices, supply cycles and payment terms of TK16J60W,S1VE, please feel free to contact us at any time. To facilitate the processing of your inquiry, please include TK16J60W,S1VE and the required quantity in the RFQ. GOOD can get the latest quotations of TK16J60W,S1VE without registration. TK16J60W,S1VE latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	150°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1350 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs	38 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	190mOhm @ 7.9A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.7V @ 790µA
Supplier Device Package	TO-3P(N)
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	130W (Tc)
Series	-
Package / Case	TO-3P-3, SC-65-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	15.8A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TK16J60