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TK16J60W,S1VE

Toshiba Semiconductor and Storage

Product No:

TK16J60W,S1VE

Package:

TO-3P(N)

Batch:

-

Datasheet:

-

Description:

X35 PB-F POWER MOSFET TRANSISTOR

Quantity:

Delivery:

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Payment:

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In Stock : 49

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $4.617

    $4.617

  • 10

    $3.87505

    $38.7505

  • 100

    $3.134715

    $313.4715

  • 500

    $2.786388

    $1393.194

  • 1000

    $2.385849

    $2385.849

  • 2000

    $2.246532

    $4493.064

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1350 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 190mOhm @ 7.9A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.7V @ 790µA
Supplier Device Package TO-3P(N)
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 130W (Tc)
Series -
Package / Case TO-3P-3, SC-65-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 15.8A (Ta)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number TK16J60

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