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TK17E65W,S1X

Toshiba Semiconductor and Storage

Product No:

TK17E65W,S1X

Package:

TO-220

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 650V 17.3A TO220

Quantity:

Delivery:

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Payment:

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In Stock : 50

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.9355

    $2.9355

  • 10

    $2.6334

    $26.334

  • 100

    $2.15726

    $215.726

  • 500

    $1.836464

    $918.232

  • 1000

    $1.548823

    $1548.823

  • 2000

    $1.471388

    $2942.776

  • 5000

    $1.41607

    $7080.35

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 200mOhm @ 8.7A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 900µA
Supplier Device Package TO-220
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 165W (Tc)
Series DTMOSIV
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 17.3A (Ta)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number TK17E65

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