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TK190U65Z,RQ

Toshiba Semiconductor and Storage

Product No:

TK190U65Z,RQ

Package:

TOLL

Batch:

-

Datasheet:

-

Description:

DTMOS VI TOLL PD=130W F=1MHZ

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 2313

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.6695

    $2.6695

  • 10

    $2.2439

    $22.439

  • 100

    $1.815165

    $181.5165

  • 500

    $1.613499

    $806.7495

  • 1000

    $1.381556

    $1381.556

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for TK190U65Z,RQ, please feel free to contact us. To facilitate the processing of your inquiry, kindly include TK190U65Z,RQ and the required quantity in your RFQ. IICSEMI provides the latest quote for TK190U65Z,RQ without requiring registration. Latest information on TK190U65Z,RQ: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs TK190U65Z,RQ latest information:#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature 150°C
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1370 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 190mOhm @ 7.5A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 610µA
Supplier Device Package TOLL
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 130W (Tc)
Series DTMOSVI
Package / Case 8-PowerSFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 15A (Ta)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)

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