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TK1R4F04PB,LXGQ

Toshiba Semiconductor and Storage

Product No:

TK1R4F04PB,LXGQ

Package:

TO-220SM(W)

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 40V 160A TO220SM

Quantity:

Delivery:

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Payment:

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In Stock : 385

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.489

    $2.489

  • 10

    $2.0691

    $20.691

  • 100

    $1.64654

    $164.654

  • 500

    $1.393194

    $696.597

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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Product Information

Parameter Info

User Guide

Operating Temperature 175°C
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 5500 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs 103 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 1.9mOhm @ 80A, 6V
Product Status Active
Vgs(th) (Max) @ Id 3V @ 500µA
Supplier Device Package TO-220SM(W)
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 205W (Tc)
Series U-MOSIX-H
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 160A (Ta)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tape & Reel (TR)
Base Product Number TK1R4F04

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