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TK20V60W5,LVQ

Toshiba Semiconductor and Storage

Product No:

TK20V60W5,LVQ

Package:

4-DFN-EP (8x8)

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 600V 20A 4DFN

Quantity:

Delivery:

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Payment:

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In Stock : 4812

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.8215

    $2.8215

  • 10

    $2.3674

    $23.674

  • 100

    $1.91539

    $191.539

  • 500

    $1.702533

    $851.2665

  • 1000

    $1.457794

    $1457.794

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 190mOhm @ 10A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 1mA
Supplier Device Package 4-DFN-EP (8x8)
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 156W (Tc)
Series DTMOSIV
Package / Case 4-VSFN Exposed Pad
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 20A (Ta)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number TK20V60

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