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TK31E60W,S1VX

Toshiba Semiconductor and Storage

Product No:

TK31E60W,S1VX

Manufacturer:

Toshiba Semiconductor and Storage

Package:

TO-220

Batch:

Datasheet:

Description:

MOSFET N-CH 600V 30.8A TO220

Quantity:

Delivery:

Payment:

In Stock : 50

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$7.5145

$7.5145
10

$6.43815

$64.3815
100

$5.36484

$536.484
500

$4.733698

$2366.849
1000

$4.260322

$4260.322
2000

$3.99208

$7984.16

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Product Information

Parameter Info

User Guide

Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3000 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs	86 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	88mOhm @ 15.4A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.7V @ 1.5mA
Supplier Device Package	TO-220
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	230W (Tc)
Series	DTMOSIV
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	30.8A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TK31E60