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TK3A60DA(STA4,Q,M)

Toshiba Semiconductor and Storage

Product No:

TK3A60DA(STA4,Q,M)

Manufacturer:

Toshiba Semiconductor and Storage

Package:

TO-220SIS

Batch:

Datasheet:

Description:

MOSFET N-CH 600V 2.5A TO220SIS

Quantity:

Delivery:

Payment:

In Stock : 47

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$1.102

$1.102
10

$0.988

$9.88
100

$0.770165

$77.0165
500

$0.636253

$318.1265
1000

$0.502303

$502.303
2000

$0.468816

$937.632
5000

$0.44537

$2226.85
10000

$0.42863

$4286.3

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Product Information

Parameter Info

User Guide

Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	380 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	9 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	2.8Ohm @ 1.3A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4.4V @ 1mA
Supplier Device Package	TO-220SIS
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	30W (Tc)
Series	π-MOSVII
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	2.5A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TK3A60