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TK3R1E04PL,S1X

Toshiba Semiconductor and Storage

Product No:

TK3R1E04PL,S1X

Package:

TO-220

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 40V 100A TO220

Quantity:

Delivery:

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Payment:

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In Stock : 30

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.311

    $1.311

  • 10

    $1.0697

    $10.697

  • 100

    $0.8322

    $83.22

  • 500

    $0.705375

    $352.6875

  • 1000

    $0.574598

    $574.598

  • 2000

    $0.540911

    $1081.822

  • 5000

    $0.515156

    $2575.78

  • 10000

    $0.491378

    $4913.78

Not the price you want? Send RFQ Now and we'll contact you ASAP.

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Product Information

Parameter Info

User Guide

Operating Temperature 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 4670 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs 63.4 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 3.8mOhm @ 30A, 4.5V
Product Status Active
Vgs(th) (Max) @ Id 2.4V @ 500µA
Supplier Device Package TO-220
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 87W (Tc)
Series U-MOSIX-H
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tube
Base Product Number TK3R1E04

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