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TK40E10K3,S1X(S

Toshiba Semiconductor and Storage

Product No:

TK40E10K3,S1X(S

Package:

TO-220-3

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 100V 40A TO220-3

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 4000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs 84 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 15mOhm @ 20A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 4V @ 1mA
Supplier Device Package TO-220-3
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) -
Series U-MOSIV
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 40A (Ta)
Mfr Toshiba Semiconductor and Storage
Package Tube
Base Product Number TK40E10

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